Electrical properties of shallow levels inphyphen;type HgCdTe

摘要

Electrical measurements of goldhyphen;doped and undopedphyphen;type Hg1minus;xCdxTe withxbartil;0.22 are reported and two models based on two shallow acceptor levels for the analysis of the Hall data are developed. One model assumes two independent acceptors and the other assumes one divalent acceptor. The models yield ionization energies of 12.5plusmn;2 and 2ndash;5 meV. The concentration of the compensating donors is of the order of the hole concentration. Arguments are given in order to assign these levels to established point defects.