In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors

摘要

A lattice-matched delta-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (similar to 1.8 eV), high Schottky barrier height (phi(B)> 0.73 eV), and large conduction-band discontinuity (Delta E-c> 0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 mu A at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved. (C) 2000 American Institute of Physics. S0003-6951(00)05121-4. References: 21