Formation and laser-induced-fluorescence study of SiO↑(+) ions produced by laser ablation of Si in oxygen gas

摘要

We have studied laser-induced-fluorescence (LIF) spectra of SiO↑(+) produced by laser ablation of a Si wafer in oxygen ambient gas. Emission from neutral and ionic species of Si atoms and SiO molecules is also studied in the laser-induced plasma plume. The optimum oxygen pressure for the formation of molecular ions is found to be～120 mTorr. The rotational temperature of SiO↑(+) ions shows rapid thermalization toward room temperature within 20μs. # 1997 American Institute of Physics. S0003-6951 (97)00234-9