Deformation by bending of Si or Sihyphen;SiO2wafers was achieved by sputter deposition of tantalum films. Strains induced at Sihyphen;SiO2interface and in Ta films were investigated using a combination of xhyphen;ray diffraction, electron diffraction, and transmission electron microscopy. Thin Ta film deposits had predominantly a fcc structure, while thicker films had the normal bcc structure with certain admixture of fcc. Film strains generated by the coexistence of the polymorph structure were accommodated by formation of misfit dislocations at the filmhyphen;Si substrate interface. The effect of the induced stress on the electronic parameters characterizing the Sihyphen;SiO2interface was studied in the metalhyphen;oxidehyphen;semiconductor structure and for the effect on photovoltaic response a metalhyphen;insulatorhyphen;semiconductor solar cell configuration was used. Large changes with increasing stress were observed in the values of recombination time, capture cross section, diffusion length, and in sharply decreased conversion efficiency, fill factor, openhyphen;circuit voltage, and shorthyphen;circuit current.
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