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机译:Threshold Fluence Measurement for Laser Liftoff of InP Thin Films by Selective Absorption
Stanford Univ, Geballe Lab Adv Mat, Dept Mat Sci, Stanford, CA 94305 USA;
III-V; InP; laser liftoff; semiconductor; thin film; COMPOUND SEMICONDUCTORS; SOLAR-CELL; GAAS; TECHNOLOGY; DEPENDENCE;