The structure ofponnHgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and dopedntype with indium. Thephyphen;type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealedexsituto form the random alloy. The activephyphen;njunction is formed below the ashyphen;grownphyphen;ninterface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near thephyphen;njunction as well as in thenlayer in influencing device quality.
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