Electron diffusion length measurements have been performed inp‐type InP by different methods: Surface photovoltage, spectrum analysis of the photocurrent in an Indium Tin Oxide/p‐InP diode, variation of the photovoltage in this diode versus reverse voltage, Electron Beam Induced Current measurements. The results are compared and discussed in detail. A doublep‐type region model with different electron diffusion lengths has been proposed to explain the experimental results.
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