The Schottky barrier height and ideality factor of Pt on p-type strained Si (grown on a graded relaxed Si↓(0.82)Ge↓(0.18) buffer layer) have been investigated in the temperature range (90-150 K) using the current-voltage characteristics and are found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. Simulation based on a drift-diffusion emission model has been used to explain the experimental results. # 1997 American Institute of Physics. S0003-6951 (97)04233-2
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