Formation and properties of In‐doped high‐conductivity CdSe evaporated film

摘要

High dark‐conductivity CdSe films have been prepared by coevaporation of CdSe and In, and the physical properties of the films were investigated. The dark conductivity of the films at 25 °C ranged from 0.68 to 3800 S cm−1. The conductivity type wasn‐type and In was found to act as the donor in CdSe films.The film structure was of hexagonal zinc sulfide type with a preferential orientation of the (002) planes parallel to the substrate. Analyzing the film structure in detail by x‐ray analysis, it was found that the In atoms were doped substitutionally into the CdSe during the low‐concentration doping stage and then doped interstitially during the high doping stage.