机译:Defect-induced rigidity enhancement in layered semiconductors
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, United States;
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, United States;
AFRL, RX, WPAFB, OH 45433, United States;
Ab initio; Defects in semiconductors; Electronic structure; Mechanical properties;