Phosphorus doping for hydrogenated amorphous silicon films by a lowhyphen;energy ion doping technique

摘要

A heated film of hydrogenated amorphous silicon was doped with phosphorus and hydrogen by a 6.0hyphen;kV diffused and accelerated beam of ions from rf discharge in a magnetic field, which produced a plasma from phosphine gas containing hydrogen. This doping technique achieved a dark conductivity of 8.7times;10minus;4(OHgr;thinsp;cmminus;1) at room temperature. The conductivity activation energy was 0.17 eV.