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Vacancy formation in (Pb,La)(Zr,Ti)O_(3) capacitors with oxygen deficiency and the effect on voltage offset

机译:Vacancy formation in (Pb,La)(Zr,Ti)O_(3) capacitors with oxygen deficiency and the effect on voltage offset

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摘要

Vacancy-related defect profiles have been measured for La_(0.5)Sr_(0.5)CoO_(3)/(Pb_(0.9)La_(0.1))×(Zr_(0.2)Ti_(0.8))O_(3)/La_(0.5)Sr_(0.5)CoO_(3) ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint.

著录项

  • 来源
    《Applied physics letters》 |2000年第1期|127-129|共3页
  • 作者单位

    Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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