Electron irradiation effect on antimony doping of silicon ⟨111⟩ grown by molecular‐beam epitaxy

摘要

The effect of electron irradiation on the antimony doping levels in silicon molecular‐beam epitaxy has been studied. For substrate temperatures in the 620–800 °C range, electron irradiation enhances the doping efficiency significantly. Sharp, well‐defined profiles, high doping levels (up to 3×1019cm−3) and high‐quality epitaxial layers are obtained. Using a semiempirical model, a chart of the doping levels as a function of both the substrate temperature and antimony flux is developed. The influence of electron irradiation on the antimony adlayer is also discussed.