Thermally stimulated current inphyphen;type CuInSe2thin films

摘要

We observe a strong thermally stimulated current (TSC) inphyphen;type CuInSe2thin films at temperatures from 100 to 350 K. Annealing in air appears to passivate this TSC activity. The passivation is reversible, and the spectra may be partially recovered by reduction. We attribute the three dominant TSC structures to three energy levels, 35, 45, and 100 meV, and we believe that they are associated with intrinsic defects, i.e., vacancies and antisites which are also observed in photoluminescence. We identify oxygen compensation of donors as the cause of the improved transport in CuInSe2after air annealing.