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首页> 外文期刊>Applied physics letters >Measurements of alpha-factor in 2-2.5 mu m type-I In(Al)GaAsSb/GaSb high power diode lasers
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Measurements of alpha-factor in 2-2.5 mu m type-I In(Al)GaAsSb/GaSb high power diode lasers

机译:Measurements of alpha-factor in 2-2.5 mu m type-I In(Al)GaAsSb/GaSb high power diode lasers

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摘要

Spectra of the linewidth enhancement factor (alpha) of room-temperature-operated high-power 2-2.5 mum In(Al)GaAsSb/GaSb type-I quantum-well (QW) lasers were measured using Hakki-Paoli technique. Values of alpha at threshold were in the range 2.5 to 4 for all devices under study. Devices emitting 1 W cw power at lambda=2.5 mum have 1.5-1.6 compressively strained QW active region and the lowest alpha equal to 2.5. Measured average filament spacings in near field are in rough agreement with predictions given by experimental alpha-factor values. (C) 2002 American Institute of Physics. References: 16

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