4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×10~(7)-5×10~(9) cm~(-2). The reverse breakdown voltage decreased from ～500 V in unirradiated devices to ～-450 V after the highest proton dose. The reverse leakage current at -250 V was approximately doubled under these conditions. The forward current at -2 V decreased by ～1 (fluence of 5×10~(7) cm~(-2)) to ～42 (fluence of 5×10~(9) cm~(-2)), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×10~(8) cm~(-2), but were more strongly affected (increase of 40-75) at the highest dose employed.
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