Atmospheric pressure organometallic vaporhyphen;phase epitaxy was used to grow GaP doping superlattices. Measurements are reported for the first doping superlattice with a band gap which is indirect in both real space andkspace. The first observations of phonon replicas in anhyphen;ihyphen;phyphen;iphotoluminescence (PL) spectrum and anhyphen;ihyphen;phyphen;ihyphen;like PL peak coming from donorndash;acceptor transitions are also reported. Large energy shifts of 60 meV per decade of excitation intensity have been observed. Thenhyphen;ihyphen;phyphen;ipeak intensities increased linearly with excitation intensity, and the bound exciton peak intensities increased superlinearly, at low illumination intensity, as expected for a periodically modulated spacehyphen;charge potential. The distribution coefficients for Te and Zn in GaP were found, at 630thinsp;deg;C, to be 34 and 3.0times;10minus;3, respectively.
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