Electrical and optical properties of Sihyphen; and Snhyphen;doped InxGa1minus;xAs (xbartil;0.53) grown by molecular beam epitaxy

摘要

This communication reports the majorityhyphen;carrier properties and roomhyphen;temperature photoluminescence of InxGa1minus;xAs (xbartil;0.53) doped with Si and Sn, grown on InP substrates by molecular beam epitaxy. The peak doping levels attainable with Si and Sn are established, and comparison is made with dopant behavior in GaAs. The effects of Sihyphen;doping level on photoluminescent yield are reported.