An investigation of the voltagehyphen;withstanding mechanism of BaTiO3ceramic semiconductors

摘要

The voltagehyphen;withstanding behavior of a BaTiO3ceramic semiconductor is closely related to the grain boundary structure of this kind of ceramic. This mainly depends on the height of the potential barrier in the grain boundary. A novel concept of the barrier height per unit width is proposed, by which the voltagehyphen;withstanding mechanism can be satisfactorily explained. Positive temperature coefficient devices of high performance have been developed, which possess resistivity (102OHgr;thinsp;cm) at room temperature and high withstanding voltage (300 V/mm).