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Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers
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机译:Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers
We have fabricated and studied the dynamics of In0.16Ga0.84As lgr;hyphen;cavity lasers focusing on the influence of carrier transport/capture and gain flattening by using optical resonant pumping and offhyphen;resonant pumping. With the offhyphen;resonant pumping, shoulders in the lasing pulse shape were observed, while no shoulder appeared with the onhyphen;resonant pumping. From rate equation analysis and timehyphen;resolved photoluminescence measurement, it was concluded that the shoulders result from carrier transport/capture effects. Saturation of the inverse rise time was observed at high pump levels. This results from gain flattening due to the steplike density of states of 2D carriers. The pulse width obtained from the laser was as narrow as 7.7 ps. copy;1996 American Institute of Physics.
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