Atomic resolution with an atomic force microscope using piezoresistive detection

摘要

A new detection scheme for atomic force microscopy (AFM) is shown to yield atomic resolution images of conducting and nonconducting layered materials. This detection scheme uses a piezoresistive strain sensor embedded in the AFM cantilever. The cantilever is batch fabricated using standard silicon micromachining techniques. The deflection of the cantilever is measured directly from the resistance of the piezoresistive strain sensor without the need for external deflection sensing elements. Using this cantilever we achieved 0.1 Aring;rmsvertical resolution in a 10 Hzndash;1 kHz bandwidth.