Measurements of the resistance and 1/fnoise of continuous thin‐film indium conductors in the temperature range 140–160 °C for frequencies 0.1–256 Hz are reported. The 250‐nm‐thick, 500‐nm‐wide, 5.0‐mgr;m‐long, six‐probe conductors were fabricated on an oxidized silicon wafer usinge‐beam lithography, and were encapsulated with a 500‐nm‐thick layer of Si3Ni4. Upon heating, melting occurred at (156±1) °C, whereas upon cooling, solidification occurred at (152±1) °C. The band‐limited variance ⟨dgr;r2⟩ of the resistance fluctuations was a factor of 10 lower for the liquid than for the solid, while the resistance of the liquid was nearly twice that of the solid. Hence, the relative 1/fnoise of the liquid was nearly 40 times lower than that of the solid, in conflict with the results of two‐probe measurements on liquid gallium found in the literature. These new results are consistent with models that attribute the 1/fnoise of metals to defects and inconsistent with models that relate the noise to intrinsic mechanisms like phonon scattering or infrared divergences.
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