Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures

摘要

Selectively doped single period (Al,Ga)As/GaAs heterostructures have been grown by molecular beam epitaxy and characterized by Van der Pauwhyphen;Hall measurements. The mobility of the twohyphen;dimensional electron gas localized at the heterojunction interface has been examined as a function of background charge concentration in the GaAs layer. The electron mobility has been found to decrease monotonically with increasing background concentration, as predicted by calculations based on a twohyphen;dimensional screening factor and remote donorhyphen;electron interaction.