Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current

摘要

The apparatus is described that has been used to determine the lifetime, the effective recombination velocity, and the diffusion length near the grain boundary in a polycrystalline silicon solar cell. The lifetime has been estimated from rise of the electron‐beam‐induced current after switching on the incident electron beam; the diffusion length and the effective recombination velocity have been determined from the steady‐state electron‐beam‐induced current characteristics. The experimental rise‐time characteristics are compared with theoretical ones.