Suppression of acceptor deactivation in silicon by argonhyphen;ion implantation damage

摘要

Permeation of atomic hydrogen in Si damaged with Ar implantation has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by lowhyphen;energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in silicon wafers subjected to lowhyphen;energy argonhyphen;ion implantation. Trapping of hydrogen in defect sites generated by argon implant and possibly the formation of molecular hydrogen in the implanted region hinders hydrogen permeation into the Si bulk.