InGaAsP/InP buriedhyphen;heterostructure lasers (lgr; = 1.5 mgr;m) with chemically etched mirrors

摘要

Buriedhyphen;heterostructure InGaAsP/InP lasers with chemically etched mirrors are fabricated successfully. The lasers emit light at sim;1.5 mgr;m. The threshold current of these lasers is nearly the same as that of conventionally fabricated cleavedhyphen;mirror lasers. This fabrication procedure enables us to obtain lowhyphen;thresholdhyphen;current devices and allows a much wide variety of device design and fabrication compared with the conventional cleaving technique.