Deformation potential and intervalley scattering: Hothyphen;electron transistor analysis

摘要

The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tighthyphen;binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electronhyphen;electron interactions successfully explain the observed ratio of collectorhyphen;tohyphen;emitter current as a function of injected electron energy in a GaAs hothyphen;electron transistor.