Oxygen precipitation and bulk microdefects induced by the prehyphen; and postepitaxial annealing inN/N+(100) silicon wafers

摘要

Substrate wafers used for fabrication of epitaxial silicon wafers heavily doped with antimony at the concentration of 1020atoms/cm3were preannealed at a temperature between 500 and 900thinsp;deg;C prior to epitaxial deposition. Device fabrication thermal simulation was performed by heat treating the preannealed epitaxial wafers at 1050thinsp;deg;C in dry oxygen ambient for 16 h. Postepitaxial nucleation heat treatment at 750thinsp;deg;C for 4 h prior to the 1050thinsp;deg;C heat treament cycle was also applied on some epitaxial wafers for the purpose of enhancing the oxygen precipitation in silicon. It was observed that morphology and density of the bulk defects induced by the thermal treatment are affected by the preannealing temperature. The results also indicate that nucleation and growth kinetics of oxygen precipitates in preannealedn+degenerate silicon substrate is strongly governed by oxygen and point defect diffusion.