Breakdown field in vaporhyphen;grown silicon carbidephyphen;njunctions

摘要

The electrical breakdown of onehyphen;sided abruptphyphen;njunctions in 6Hsilicon carbide has been investigated. The diodes are produced by vapor growth and mesa etching. Breakdown fields in the range (2ndash;3.7) times;106V/cm have been observed forplayers with 1017NA2times;1018cmminus;3. These figures tend to support the results of van Opdorp and Vrakking.