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首页> 外文期刊>Applied physics letters >I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits
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I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits

机译:I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits

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摘要

Industrialization of polymer electronics requires the use of safe solvents. To that end an I-line lithography process for conducting thin poly(3,4-ethylenedioxythiophene) films has been developed. The fully waterborne process is based on photocrosslinking using bisazide- and polyazide-type photoinitiators. The minimum feature size realized comprises 2.5 mum wide lines separated by 1 mum spacings. The sheet resistance is 1 kOmega/square. The process has been applied to fabricate all-polymer integrated circuits. The technology is demonstrated with functional 15-bit code generators. (C) 2002 American Institute of Physics. References: 18

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