Thermal oxidation of InP in phosphorus pentoxide vapor

摘要

A modified thermal oxidation of InP is proposed. The native oxide films have been thermally grown on InP substrates in phosphorus pentoxide vapor at temperatures ranging from 400 to 500thinsp;deg;C. The oxide films are mainly composed of InPO4. Improved resistivities of the films at room temperature range from 1011to 1012OHgr;thinsp;cm.