The interdiffusion of a Si/Si0.85Ge0.15/Si single quantum well heterostructure subjected to thermal annealing in a nitriding ambient was investigated as a function of anneal temperature and time. Nitridation of the silicon surface alters equilibrium vacancy point defect populations throughout the structure, which allows the determination of the point defect species important in interdiffusion. Diffusion coefficients of Ge after nitridation of similar to1 x 10(-14) cm(2)/s for 1100 degreesC and similar to1 x 10(-13) cm(2)/s for 1200 degreesC were extracted. The extent of diffusion in a nitriding ambient was much less than in an inert ambient, which indicates minimal vacancy contribution to interdiffusion. This is in contrast to results from previously published studies performed in an oxidizing ambient. (C) 2001 American Institute of Physics. References: 17
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机译：研究了Si/Si0.85Ge0.15/Si单量子阱异质结构在氮化环境下热退火的相互扩散与退火温度和时间的关系。硅表面的氮化会改变整个结构中的平衡空位点缺陷群，从而可以确定在相互扩散中很重要的点缺陷物种。提取了氮化后Ge的扩散系数，分别是1 x 10（-14） cm（2）/s（1100°C）和1 x 10（-13） cm（2）/s（1200°C）。氮化环境下的扩散程度远小于惰性环境中的扩散程度，这表明空位对相互扩散的贡献最小。这与先前发表的在氧化环境中进行的研究结果形成鲜明对比。（C） 2001年美国物理研究所。[参考文献： 17]
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