The air mass zero behavior of inversion layer solar cells with a silicon nitride dielectric layer

摘要

The reliability of metalhyphen;insulatorhyphen;semiconductor (MIS) inversion layer (IL) solar cells with a plasmahyphen;deposited siliconhyphen;nitride dielectric layer is investigated by irradiating these cells with a mercury super pressure lamp. In comparison to the air mass zero (AM0) sun spectrum this is a slightly accelerated testing procedure. The dependence of the dark and illuminatedIhyphen;Vcharacteristics of the cells on the irradiation time is monitored. As revealed by the experiments, the values of the shorthyphen;circuit current, of the openhyphen;circuit voltage, and of the fill factor of these cells diminish by irradiation. As a consequence, a drastic decrease of the air mass one (AM1) totalhyphen;area efficiency can be observed. The observed irradiation effects can be understood by introducing an inversion layer recombination current which is due to photonhyphen;generated interface states at the silicon nitride/thin silicon oxide/silicon interface.