Lowhyphen;noise and highhyphen;power GaAs microwave fieldhyphen;effect transistors prepared by molecular beam epitaxy

摘要

The lowhyphen;noise FETrsquo;s prepared on molecularhyphen;beamhyphen;epitaxial (MBE) layers have a noise figure of 1.9 dB with a corresponding gain of 11 dB at 6 GHz. The power FETrsquo;s can produce 1.3 W at 4.4 GHz (1hyphen;dB compression) with a gain of 10 dB and a powerhyphen;added efficiency of 35percnt;. The influence of substrate preparation on Hall mobility for very thin layers was also studied and there is no evidence of Cr diffusion from the substrate at the MBE growth temperature.