Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces

摘要

We determine the energy barrier height for the formation of positively charged phosphorus vacancies in InP(110) surfaces using the rate of formation of vacancies measured directly from scanning tunneling microscope images. We found a barrier height in the range of 1.15-1.21 eV. The barrier height decreases with increasing carrier concentration. These results are explained by a charge separation during the vacancy formation process.