The isolated layer model and transfer impedances for AlxGa1minus;xAs/GaAs heterostructures

摘要

We use the concept of transfer impedances to study a model of AlxGa1minus;xAs/GaAs heterostructures in which the twohyphen;dimensional (2D) gas layer is isolated from the parallel threehyphen;dimensional (3D) layer (isolated layer model) but is joined by resistors at the peripheral contacts. We use the conformal mapping method to find the relation between the transfer impedances and the resistivity tensor of the quasihyphen;2D system, and point out differences with the previous literature for a similar model.