Recent advances in the development of highTcsuperconducting thick films have lead the present work to optimize laser etching parameters for patterning thick films for device fabrication. Plasmahyphen;deposited superconducting thick films (200ndash;400 mgr;m) of Yhyphen;Bahyphen;Cuhyphen;oxide materials on polycrystalline alumina and copper substrates were laser etched using a CO2laser (10.6 mgr;m) in the enhanced pulse mode. Significant spatial nonuniformity of the surface elemental distribution of Y, Ba, Cu, and Al was observed in the underlying laserhyphen;etched area. The laser fluence for threshold etching was observed to be 25 J/cm2. An etch rate of 4.0 mgr;m/scan was calculated at an optimized laser fluence of 292 J/cm2for patterning plasmahyphen;sprayed thick films having an estimated heat affected zone of 15 mgr;m. An absorption length of 52 mgr;m for the CO2laser was determined to be suitable for patterning thick films for device fabrication.
展开▼
