Heat treatment effects on an In‐GaAs ohmic contact are reported. Our finding is that the contact resistance of In to GaAs exhibits a practically insignificant increase after a heat treatment at a temperature of up to 900 °C. Results of secondary ion mass spectroscopy analysis show that the diffusion constant of In in GaAs is 3.3×10−5 exp(−1.9/kT) cm2/s. Moreover, a thermodynamic analysis gives the result that an InGaAs layer is formed between GaAs and In during the course of the heat treatment process. It is concluded from the above two analyses that the high stability of the contact resistance we have found is attributable to the low diffusion constant of In in GaAs and to the growth of an InGaAs interfacial layer.
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