Drift and diffusion in lowhyphen;dimensionalphyphen;njunctions

摘要

We present a theoretical drifthyphen;andhyphen;diffusion study of the currenthyphen;voltage characteristics of lowhyphen;dimensionalphyphen;njunctions. Under lowhyphen;level injection, lowhyphen;dimensionalphyphen;njunctions exhibit currenthyphen;voltage characteristics similar to those of threehyphen;dimensional diodes. Under highhyphen;level injection, the dependence of minorityhyphen;carrier diffusion coefficients on the lowhyphen;dimensional density of states may lead to the appearance of features in the smallhyphen;signal properties. Such features become more pronounced as the temperature is lowered.