Low-temperature activation of Mg-doped GaN using Ni films

摘要

The activation of metalorganic chemical vapor deposition-grown Mg-doped GaN by N_(2) annealing with a thin Ni film has been investigated, p-type conduction in GaN has been obtained at an annealing temperature as low as 200℃ using the proposed technique. A hole concentration of 2×10~(17) cm~(-3) has been achieved by the annealing at 400℃. Secondary ion mass spectroscopy measurements have revealed that hydrogen is effectively removed from the Mg-doped GaN layer. These results suggest that the Ni film significantly enhances hydrogen desorption from the GaN film, which results in the activation of Mg-doped GaN at quite low temperatures.