Insitudeposition of BaF2as a buffer layer and the superconducting thin films of Yhyphen;Bahyphen;Cuhyphen;O on silicon substrates by metalorganic chemical vapor deposition

摘要

High throughput, sharp interfaces, and selective deposition with direct ionhyphen;, electronhyphen;, and photonhyphen;beamhyphen;controlled techniques are some of the key driving forces for the development of superconducting thin films by the metalorganic chemical vapor deposition technique. In this paper, we report on theinsitudeposition of a buffer layer of BaF2and highhyphen;temperature superconducting thin films of Yhyphen;Bahyphen;Cuhyphen;O by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. These films have an onhyphen;set temperature of 90 K and zero resistance at 73 K. The use of BaF2as a buffer layer on Si substrates suggests the possibility of threehyphen;dimensional integration with highhyphen;temperature superconducting thin films, for hybrid superconductor/semiconductor devices as well as superconducting switches and other related devices. To the best of our knowledge, this is the first report of the deposition of highhyphen;temperature superconducting thin films on Si by MOCVD.