Spatially resolved detection of O atoms in etching plasmas by twohyphen;photon laserhyphen;induced fluorescence

摘要

Spatially resolved concentration profiles of groundhyphen;state oxygen atoms in O2/Ar plasmas have been obtained under loaded etching conditions through the use of a twohyphen;photon laser excitation process. These results provide a quantitative measure of the reactive atom concentration gradient during etching of kapton or graphite on the rfhyphen;driven electrode. The effects of load, ion bombardment, and diffusion on the reactive atom concentration may be directly monitored by thisinsitu, unobtrusive, threehyphen;dimensional probe technique.