Study of the interface of undoped andphyphen;doped ZnSe with GaAs and AlAs

摘要

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface spacehyphen;charge regions enabled us to detect both interface crossover transitions and transitions to triangularhyphen;well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.