Thermally and lighthyphen;induced instabilities in phosphorushyphen;doped hydrogenated amorphous silicon

摘要

Changes in the gaphyphen;state profile of phosphorushyphen;doped hydrogenated amorphous silicon films subjected to light soaking and thermal quenching have been studied by isothermal capacitance transient spectroscopy. No suggestive changes due to thermal quenching are observed in the densityhyphen;ofhyphen;states distribution at least in the energy range 0.25ndash;1.50 eV below the conductionhyphen;band edge (Ec). On the other hand, gap states are created in the range of 0.25ndash;0.35 eV belowEcby light soaking, in addition to the conversion from deeper states located 1.0ndash;1.2 belowEcto shallower states located 0.4ndash;0.6 belowEc. These results suggest that the effects of light soaking and thermal quenching are apparently independent of each other.