Incorporation of carbon dioxide laser‐grown oxide layers into conventional metal‐oxide‐silicon devices

摘要

The dielectric breakdown strength of CO2laser‐grown oxides is measured and compared with other SiO2films grown by well‐established techniques. For the first time, the successful application of laser technology with existing Integrated Circuit preparation techniques to manufacture simple Metal‐Oxide‐Silicon devices is reported. Optimum processing conditions for CO2laser oxidation of Si are described which eliminate such common laser‐induced faults as slip dislocation and wafer warpage. The average field strength exhibited by thefirstcapacitor to break down from several batches of 100 incorporating a laser‐grown oxide layer was found to be 8.3 MV cm−1.