Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures

摘要

We demonstrate a ternary (La_(x)Y_(1-x))_(2)O_(3) thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths.