Preparation of high‐purity InP by the synthesis, solute diffusion technique

摘要

High‐purity InP crystals were prepared by the synthesis, solute diffusion (SSD) technique. By vacuum baking of raw indium at 900 °C for 6 h, the first‐to‐freeze part of InP had a carrier concentration ofND−NA= 6.4×1014cm−3at 300 K and a mobility of mgr; = 79 100 cm2/V sec at 77 K. It is concluded that S and/or Si contained in In raw material are dominat donor impurities in the SSD‐InP crystal, because their contents can be decreased by the vacuum baking.