Fast neutronhyphen;induced defects in undoped and ironhyphen;doped indium phosphide

摘要

Undoped and ironhyphen;doped InP samples have been investigated by conventional electron paramagnetic resonance measurements before and after fast neutron irradiations. Besides the expected anion antisite PIndefect, they reveal the presence of a broad spectrum that could be ascribed to an anion vacancy Vpon the basis of detailed linewidth andghyphen;shift scalings of the resonance parameters of already identified intrinsic defects in GaP and InP. The irradiated InP:Fe sample shows both the nearest and nexthyphen;nearest FeInhyphen;Inipairs.