Laser detection of diatomic products of plasma sputtering and etching

摘要

We report oninsitudetection of diatomic products of plasma sputtering and reactive ion etching using the technique of laserhyphen;induced fluorescence. The diatomic molecules SiN, SiO, and SiF are observed in the gas phase when a silicon surface is subjected to ion bombardment in plasmas containing N2, O2, and CF4, respectively. Information about the production mechanisms is obtained from the measured product concentrations under varying plasma conditions.