Dependence of minority carrier diffusion length on illumination level and temperature in single crystal and polycrystalline Si solar cells

摘要

The minority carrier diffusion lengthLhas been measured in the intensity range 0ndash;200 mwthinsp;cmminus;2in the base region of diffused junctionn+psingle crystal and polycrystalline Si solar cells at various ambient temperatures (77ndash;335 K). It has been found thatLincreases monotonically with intensity at low temperatures in both types of cells. However, in case of singlehyphen;crystal cells, it shows a peak at an intensity sim;0.4 sun for temperatures above 200 K and further decreases with the increase of intensity. The results have been interpreted in the light of various recombination mechanisms involved.